Infineon IRF7739L1TRPBF

Name: Infineon IRF7739L1TRPBF
Brand: Infineon
SKU: IRF7739L1TRPBF

Single N-Channel 40 V 1 mOhm 220 nC HEXFET® Power Mosfet - DirectFET®

$ 2.727

Production

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF7739L1TRPBF	3,988	1		5.067	5.067	5.067	5.067	5.067
Future Electronics	2	IRF7739L1TRPBF	40,000	4K	Tape & Reel					2.550
DigiKey	2	IRF7739L1TRPBFCT-ND	2,279	1	Cut Tape	6.190	4.141	2.977	2.727	2.727
Avnet		IRF7739L1TRPBF	0	4K						2.409	1d
Farnell	2	IRF7739L1TRPBF	4,000	1	Cut Tape	4.704*	3.395*	2.441*	2.277*	2.277*	12h

Inventory History

3 month trend: -26.60%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7739L1TRPBF.

IHS

Datasheet10 pages13 years ago

Datasheet11 pages13 years ago

Newark

Inventory History

3 month trend:

-26.60%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-04-28

Lifecycle StatusProduction (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRF7739L1TRPBF provided by its distributors.

Single N-Channel 40 V 1 mOhm 220 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

3.8W(Ta),125W(Tc) 20V 4V@ 250¦ÌA 330nC@ 10V 1N 40V 1m¦¸@ 160A,10V 46A,270A 11.88nF@25V DIRECTFET-L8 , 9.15mm*7.1mm*740¦Ìm

UnikeyIC

A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 270 amperes optimized with low on resistance., MG-WDSON-11, RoHS

Infineon SCT

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N-CH, 40V, 375A, DIRECTFET L8; Transistor Polarity: N Channel; Continuous Drain Current Id: 375A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 700µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 125W; Transistor Case Style: DirectFET L8; No. of Pins: 15Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell