STMicroelectronics STW9N150
$ 4.684
Production
Inventory History
3 month trend: -10.50%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW9N150.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-24
Lifecycle StatusProduction (Last Updated: 1 month ago)
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N-CHANNEL 950V - 0.72 Ohm - 10A - TO-247 Zener-Protected SuperMESH™ Power MOSFET
Descriptions
Descriptions of STMicroelectronics STW9N150 provided by its distributors.
Transistor MOSFET N-CH 1.5KV 8A 3-Pin (3+Tab) TO-247 Tube
Power MOSFET, N Channel, 1.5 kV, 8 A, 2.5 Ohm, TO-247, 3 Pins, Through Hole
Power Field-Effect Transistor, 8A I(D), 1500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 1500V, 8A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1.5kV; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -10.50%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage1.5 kV
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)1.5 kV
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.255 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation320 W
Min Breakdown Voltage1.5 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation320 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time14.7 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time86 ns
Turn-On Delay Time41 ns
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW9N150.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant