onsemi SGH20N60RUFDTU
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descriptions
Descriptions of onsemi SGH20N60RUFDTU provided by its distributors.
Trans IGBT Chip N-CH 600V 32A 3-Pin(3+Tab) TO-3P(N) Rail
Transistor, igbt, n-Chan+Diode,600V V(Br)Ces,32A I(C),to-247Var Rohs Compliant: Yes |Onsemi SGH20N60RUFDTU
Discrete, Short Circuit Rated IGBT
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current32 A
Current Rating20 A
Element ConfigurationSingle
Fall Time168 ns
Max Collector Current32 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation195 W
Reverse Recovery Time95 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V
Dimensions
Height23.8 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements