Infineon IRGB4056DPBF

Name: Infineon IRGB4056DPBF
Brand: Infineon
SKU: IRGB4056DPBF

600 V, 12 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS

$ 3.475

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRGB4056DPBF	1,005					1.530	1.370	1.290	12h
RS (Formerly Allied Electronics)		IRGB4056DPBF	0	1	Bulk	6.200	5.580	5.580	5.580	5.580	3h
Farnell		IRGB4056DPBF	0	1		4.417*	4.417*	4.417*	4.417*	4.417*	11h
Mouser		942-IRGB4056DPBF	3,619	1	Tube	6.010	5.700	5.700	5.700	5.700
Microchip USA		IRGB4056DPBF	361	600	Tray				1.608	1.608	3d

Inventory History

3 month trend: -0.34%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRGB4056DPBF.

Farnell

Datasheet10 pages18 years ago

IHS

Inventory History

3 month trend:

-0.34%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-02-24

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-01-15

LTD Date2022-07-15

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Descriptions

Descriptions of Infineon IRGB4056DPBF provided by its distributors.

600 V, 12 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB

Avnet

IRGB4056DPbF Series 600 V 12 A N-Channel Bipolar Transistor IGBT - TO-220AB

Future Electronics

600V UltraFast Copack Trench IGBT in a TO-220AB package

International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:24A; Collector Emitter Voltage Vces:1.55V; Power Dissipation Pd:140W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:24A; Package / Case:TO-220; Power Dissipation Max:140W; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulsed Current Icm:48A; Rise Time:17ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

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