onsemi MUN5113DW1T1G

Name: onsemi MUN5113DW1T1G
Brand: onsemi
SKU: MUN5113DW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

$ 0.063

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		MUN5113DW1T1G	101					0.040	0.033	0.029	22h
DigiKey	3	488-MUN5113DW1T1GCT-ND	4,656	1	Cut Tape	0.270	0.164	0.102	0.066	0.066
Flip Electronics		MUN5113DW1T1G	135,000								6d
Newark	2	MUN5113DW1T1G	0	3K	Cut Tape					0.052
Onlinecomponents.com		MUN5113DW1T1G	0	3K	Bulk					0.032

Inventory History

3 month trend: -8.71%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5113DW1T1G.

IHS

Datasheet11 pages8 years ago

Upverter

onsemi

Newark

Arrow Electronics

Inventory History

3 month trend:

-8.71%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMUN5113DW1T1G

onsemiMUN5113DW1T1

Price @ 1000

$ 0.063

$ 0.044

Stock

2,218,305

115,540

Authorized Distributors

Mount

Case/Package

SOT-363-6

Polarity

PNP

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

hFE Min

Power Dissipation

250 mW

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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onsemiMUN5314DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm

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Descriptions

Descriptions of onsemi MUN5113DW1T1G provided by its distributors.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

IHS

Dual PNP Bipolar Digital Transistor (BRT)

onsemi

MUN Series 50 V 100 mA 47 kOhm PNP Silicon Dual Bias Resistor Transistor SOT-363

Future Electronics

2 PCS PNP Pre-Biased(Dual) 250mW 100mA 50V SOT-363 Digital Transistors ROHS

Dasenic

Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R

Verical

Brt Transistor, 50V, 47K/47Kohm, Sot-363; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Dc Collector Current:-100Ma; No. Of Pins:6 Rohs Compliant: Yes |Onsemi MUN5113DW1T1G

Newark

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.

North Star Micro