onsemi MMBT5551LT1G
$ 0.04
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +36.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.04
$ 0.06
$ 0.06
Stock
88,881,663
3,560,127
3,560,127
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
160 V
160 V
Max Collector Current
60 mA
600 mA
600 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
200 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
225 mW
300 mW
300 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
onsemiMMBT5550LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 140 V, 600 mA, 225 mW, SOT-23, Surface Mount
onsemiMMBT5550LT3G
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
onsemiMMBT5550LT1
Cut Tape (CT) Single 3 Contains Lead Bipolar (BJT) Transistor 600mA 225mW 180V 150C
Descriptions
Descriptions of onsemi MMBT5551LT1G provided by its distributors.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount
160V 225mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
ON SEMI MMBT5551LT1G NPN BIPOLAR TRANSISTOR, 0.06 A, 160 V, 3-PIN SOT-23
NPN transistor, 160V, 600mA, SOT-23, used for high-voltage switching and amplification
Bipolar Transistors (BJT); MMBT5551LT1G; ON SEMICONDUCTOR; NPN; 3; 160 V; 600 mA
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R
Avnet Japan
High Voltage NPN Bipolar Transistor
Trans Bjt Single, Npn, 160V, 60Ma; |Onsemi MMBT5551LT1G.
60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
onsemi NPNTransistor, SOT-23encapsulation, SMD mount, Maximum DC collector current600 mA, maximum collector-emission voltage140 V
TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Tran
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +36.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current60 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Voltage Rating (DC)160 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements