Descriptions of onsemi MMBT5551LT1G provided by its distributors.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount
160V 225mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
ON SEMI MMBT5551LT1G NPN BIPOLAR TRANSISTOR, 0.06 A, 160 V, 3-PIN SOT-23
NPN transistor, 160V, 600mA, SOT-23, used for high-voltage switching and amplification
Bipolar Transistors (BJT); MMBT5551LT1G; ON SEMICONDUCTOR; NPN; 3; 160 V; 600 mA
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R
Avnet Japan
High Voltage NPN Bipolar Transistor
ON Semiconductor MMBT5551LT1G Transistor Tape on Full reel For high voltage
60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Tran
Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:60Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi MMBT5551LT1G.