onsemi HGTG30N60B3
Obsolete
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 4.67
Stock
217,370
102
Authorized Distributors
0
1
Mount
Through Hole
-
Case/Package
TO-247
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
60 A
60 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.45 V
-
Reverse Recovery Time
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Related Parts
STMicroelectronicsSTGW30NC60WD
Transistor IGBT Chip N-Channel 600 Volt 60A 3-Pin(3+Tab) TO-247
STMicroelectronicsSTGW30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
STMicroelectronicsSTGW30V60F
IGBT 600V 60A 260W TO247 / Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
InfineonIKW30N60H3FKSA1
Trans IGBT Chip N-CH 600V 60A 187mW Automotive 3-Pin(3+Tab) TO-247 Tube
Descriptions
Descriptions of onsemi HGTG30N60B3 provided by its distributors.
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V N-Channel IGBT UFS Series
IGBT UFS N-CHAN 600V 60A TO-247
TO-247-3 Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 1.9V @ 15V 30A 60A 208W 36ns/137ns
Ptpigbt To247 30A 600V Rohs Compliant: Yes
60 A 600 V N-CHANNEL IGBT TO-247
IC REG LINEAR POS ADJ 1.2A 6DFN
TRANSISTOR, IGBT; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Package / Case:TO-247; Power Dissipation Max:208W; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.45V
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.45 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current60 A
Current Rating60 A
Element ConfigurationSingle
Fall Time150 ns
Max Breakdown Voltage600 V
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation208 W
Schedule B8541290080
Voltage Rating (DC)600 V
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements