onsemi HGTG11N120CN

Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

43A, 1200V, NPT Series N-Channel IGBT | IGBT 1200V 43A 298W TO247

PWR IGBT 35A 1200V NPT N-CHANNEL TO-247

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.