Infineon IRG4PH40UDPBF

Name: Infineon IRG4PH40UDPBF
Brand: Infineon
SKU: IRG4PH40UDPBF

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube

$ 6.635

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRG4PH40UDPBF	1					2.980	2.670	2.510	2h
RS (Formerly Allied Electronics)		IRG4PH40UDPBF	0	1	Bulk	11.780	10.600	10.600	10.600	10.600	19h
Farnell		IRG4PH40UDPBF	0	1		7.205*	7.205*	7.205*	7.205*	7.205*	1d
Win Source	2	WS-IRG4PH40UD	6,296	5			10.909	7.273	7.273	7.273	3h
Worldway Electronics	2	IRG4PH40UDPBF	16,621	7	Tube		0.909	0.881	0.834	0.834	2h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4PH40UDPBF.

IHS

Datasheet10 pages14 years ago

Newark

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

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Descriptions

Descriptions of Infineon IRG4PH40UDPBF provided by its distributors.

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube

Verical

Copacked 1200V IGBT in a TO-247AC package with a ultrafast 5-40 kHz soft recovery diode, TO247COPAK-3, RoHS

Infineon SCT

IRG4PH40UDP Series 1200 V 12 A Insulated Gate Bipolar Transistor - TO-247AC

Future Electronics

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

IHS

IRG4PH40 DISCRETE IGBT WITH ANTI-PARALL;

Farnell

Target Applications: Solar; Welding

Infineon

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

Win Source

IRG4PH40U - 1200V ULTRAFAST 5-40

Vigor Components

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:41A; Collector Emitter Saturation Voltage, Vce(sat):3.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40UD; Fall Time Max:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:59ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

element14 APAC