onsemi FQB55N10TM

Name: onsemi FQB55N10TM
Brand: onsemi
SKU: FQB55N10TM

N-Channel Power MOSFET, QFET®, 100 V, 55 A, 26 mΩ, D2PAK

$ 1.07

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark	2	FQB55N10TM	76	1	Cut Tape	3.570	2.470	2.050	2.050	2.050
Arrow Electronics		FQB55N10TM	166	1		1.592	1.352	1.067	1.067	1.067
Verical		FQB55N10TM	166	6			1.352	1.067	1.067	1.067
Rochester Electronics		FQB55N10TM	5					1.330	1.100	0.984	23h
DigiKey	2	FQB55N10TMCT-ND	859	1	Cut Tape	3.370	2.188	1.516	1.088	1.012

Inventory History

3 month trend: -73.44%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQB55N10TM.

IHS

Datasheet8 pages12 years ago

Master Electronics

onsemi

element14 APAC

Arrow Electronics

Inventory History

3 month trend:

-73.44%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQB55N10TM

onsemiFQB55N10

Price @ 1000

$ 1.07

$ 1.38

Stock

160,434

34,693

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

TO-263

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

55 A

Threshold Voltage

4 V

Rds On Max

26 mΩ

Gate to Source Voltage (Vgs)

25 V

Power Dissipation

3.75 W

155 W

Input Capacitance

2.73 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQB55N10TM provided by its distributors.

N-Channel Power MOSFET, QFET®, 100 V, 55 A, 26 mΩ, D2PAK

onsemi

Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 55A D2PAK

Win Source

Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263AB, Surface Mount

Avnet

Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N CH, 100V, 55A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:155W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor