onsemi FQB55N10

Name: onsemi FQB55N10
Brand: onsemi
SKU: FQB55N10

3.75W 25V 4V 75NC@ 10V 100V 26M¦¸@ 10V 2.1NF@ 25V TO-263

$ 1.38

Obsolete

Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		FQB55N10	673	1	Cut Tape	2.860	2.510	1.770	1.380	1.310
Farnell	3	FQB55N10	673	1	Cut Tape	3.562*	2.317*	1.607*	1.264*	1.264*	16h
element14 APAC		FQB55N10	673	1	Cut Tape	3.557*	2.317*	1.607*	1.248*	1.248*	11h
Win Source		WS-FQB55N10	6,000	25				1.766	1.435	1.435	22h
Worldway Electronics		FQB55N10	8,038	7			0.479	0.464	0.440	0.440	21h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQB55N10.

IHS

Datasheet9 pages25 years ago

Farnell

element14 APAC

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

onsemiFQB55N10

onsemiFQB55N10TM

Price @ 1000

$ 1.38

$ 1.07

Stock

34,693

160,434

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

55 A

Threshold Voltage

4 V

Rds On Max

26 mΩ

Gate to Source Voltage (Vgs)

25 V

Power Dissipation

155 W

3.75 W

Input Capacitance

2.73 nF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of onsemi FQB55N10 provided by its distributors.

3.75W 25V 4V 75nC@ 10V 100V 26m¦¸@ 10V 2.1nF@ 25V TO-263

Unikeyic (ICkey)

Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:55A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: No

Newark

MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 155W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 55A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation on 1" Sq. PCB: 3.75W; Pulse Current Idm: 220A; SMD Marking: FQB55N10; Termination Type: Surface Mount Device; Voltage Vds: 100V; Voltage Vds Typ: 100V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Farnell