onsemi FGA25S125P
Obsolete
Related Parts
Descriptions
Descriptions of onsemi FGA25S125P provided by its distributors.
Trans IGBT Chip N-CH 1.25KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
1250V, 25A, Shorted-anode IGBT
Insulated Gate Bipolar Transistor, 50A I(C), 1250V V(BR)CES, N-Channel
RAIL / 1250V 25A FS SA Trench IGBT
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage1.25 kV
Collector Emitter Saturation Voltage2.16 V
Collector Emitter Voltage (VCEO)1.25 kV
Element ConfigurationSingle
Max Collector Current50 A
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Elements1
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm