onsemi FDS2672

Name: onsemi FDS2672
Brand: onsemi
SKU: FDS2672

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

$ 0.997

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics	3	FDS2672	200,000	2500	Tape & Reel					1.440
Newark	2	FDS2672	2,776	1	Cut Tape	3.020	2.080	1.530	1.280	1.280
Arrow Electronics		FDS2672	2,500	2500						0.876
Verical		FDS2672	2,500	2500						0.881
DigiKey	3	FDS2672CT-ND	7,098	1	Cut Tape	2.970	1.922	1.323	1.010	1.010

Inventory History

3 month trend: -42.77%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS2672.

IHS

Datasheet6 pages20 years ago

Datasheet7 pages2 years ago

Newark

Upverter

onsemi

element14 APAC

Inventory History

3 month trend:

-42.77%

CAD Models

Download onsemi FDS2672 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-09-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiFDS2672-F085

Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC N T/R

Details

STMicroelectronicsSTS5N15F4

N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET

Details

InfineonIRF7492PBF

Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC

Details

onsemiFDS2582

N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ

Details

InfineonIRF7820TRPBF

Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

Details

InfineonIRF7820PBF

Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC

Details

Descriptions

Descriptions of onsemi FDS2672 provided by its distributors.

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

onsemi

N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8

Future Electronics

Power MOSFET, N Channel, 200 V, 3.9 A, 0.07 ohm, SOIC, Surface Mount

Avnet

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.9A; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:2.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

Newark

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N; Max Current Id:3.9A; Max Voltage Vds:200V; On State Resistance:0.07ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:Cobalt dichloride; Avalanche Single Pulse Energy Eas:37.5mJ; Case Style:SOIC; Cont Current Id:3.9A; Max On State Resistance:0.07ohm; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Pin Configuration:D(5,6,7,8), S(1,2,3), G(4); Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Termination Type:SMD; Transistor Type:MOSFET; Typ Capacitance Ciss:1905pF; Typ Voltage Vds:200V; Typ Voltage Vgs th:2.9V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

Farnell