Infineon IRF7820TRPBF

Name: Infineon IRF7820TRPBF
Brand: Infineon
SKU: IRF7820TRPBF

Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

$ 0.657

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Distributor		SKU		Min	Pkg
Avnet	2	99AC3985	188	1		2.240	1.510	1.100	0.920	0.920	5d
Newark		IRF7820TRPBF	188	1	Cut Tape	2.230	1.500	1.090	0.875	0.875
Arrow Electronics	3	IRF7820TRPBF	3,990	1		1.784	1.180	0.863	0.623	0.576
Rutronik		TMOS1917	36,000	4K						0.601	6h
Rochester Electronics		IRF7820TRPBF	54,949					0.711	0.590	0.526	23h

Inventory History

3 month trend: -7.71%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7820TRPBF.

element14 APAC

Datasheet9 pages13 years ago

Inventory History

3 month trend:

-7.71%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-07-24

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7820TRPBF provided by its distributors.

Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Power MOSFET, N Channel, 200 V, 3.7 A, 0.0625 ohm, SOIC, Surface Mount

Avnet

Synchronous MOSFET for Notebook Processor Power | MOSFET N CH 200V 3.7A 8-SO

Win Source

Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC T/R

Verical

200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Small Signal Field-Effect Transistor, 3.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET, N-CH, 200V, 3.7A, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0625ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

Farnell