Infineon IRF7820TRPBF
MOSFET N CH 200V 3.7A 8-SO N-Channel 200 V 3.7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
$ 0.831
Production
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Inventory History
3 month trend: +1.02%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-24
Lifecycle StatusProduction (Last Updated: 8 months ago)
Related Parts
Descriptions
Descriptions of Infineon IRF7820TRPBF provided by its distributors.
MOSFET N CH 200V 3.7A 8-SO N-Channel 200 V 3.7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
Synchronous MOSFET for Notebook Processor Power | MOSFET N CH 200V 3.7A 8-SO
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC T/R
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Small Signal Field-Effect Transistor, 3.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 200V, 3.7A, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0625ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +1.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance78 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max78 mΩ
Rise Time3.2 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time14 ns
Turn-On Delay Time7.1 ns
Dimensions
Height1.75 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements