onsemi NDS355AN

Name: onsemi NDS355AN
Brand: onsemi
SKU: NDS355AN

Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R

$ 0.221

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Distributor		SKU		Min	Pkg
Future Electronics	2	NDS355AN	306,000	3K	Tape & Reel					0.141
Avnet	3	NDS355AN	234,000	3K						0.107	3d
Newark	3	NDS355AN	4,283	1	Cut Tape	0.845	0.845	0.339	0.234	0.234
Arrow Electronics	3	NDS355AN	7,860	1		0.536	0.415	0.303	0.221	0.141
Verical	8	NDS355AN	8,450	73				0.226	0.158	0.095

Inventory History

3 month trend: +12.47%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDS355AN.

Farnell

Datasheet7 pages28 years ago

Datasheet0 pages0 years ago

Datasheet8 pages17 years ago

Datasheet0 pages0 years ago

IHS

Upverter

onsemi

Newark

Inventory History

3 month trend:

+12.47%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1996-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi NDS355AN provided by its distributors.

Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R

Jameco

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ

onsemi

Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SuperSOT, Surface Mount

EBV Elektronik

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

Distrelec

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor