onsemi FCH023N65S3-F155

Name: onsemi FCH023N65S3-F155
Brand: onsemi
SKU: FCH023N65S3-F155

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V , 75 A, 23 mΩ, TO-247

$ 7.83

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Distributor	SKU		Min	Pkg
Avnet	FCH023N65S3-F155	450	30				8.611	8.218	8.218	18h
Newark	FCH023N65S3-F155	363	1		17.710	15.790	11.320	10.690	10.690
Arrow Electronics	FCH023N65S3-F155	248	30				8.698	7.830	7.830
Verical	FCH023N65S3_F155	240	30				8.698	7.830	7.830
Onlinecomponents.com	FCH023N65S3-F155	0	113	Bulk				7.640	7.640

Inventory History

3 month trend: -61.96%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCH023N65S3-F155.

onsemi

Datasheet9 pages6 years ago

Datasheet0 pages0 years ago

Newark

IHS

Master Electronics

Farnell

Inventory History

3 month trend:

-61.96%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2016-05-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCH023N65S3-F155 provided by its distributors.

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V , 75 A, 23 mΩ, TO-247

onsemi

ON SEMICONDUCTOR - FCH023N65S3-F155 - MOSFET-Transistor, n-Kanal, 75 A, 650 V, 0.0195 ohm, 10 V, 4.5 V

Fly-Wing Technology

Power Field-Effect Transistor, 75A I(D), 650V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Abacus Technologies

MOSFET, N CHANNEL, 650V, 75A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.0195ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

Farnell

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is suitable for various DC/AC power conversion for system miniaturization and higher efficiency.

Fairchild Semiconductor