STMicroelectronics STW70N60DM2
N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
$ 7.78
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Inventory History
3 month trend: -12.53%
CAD Models
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Descriptions
Descriptions of STMicroelectronics STW70N60DM2 provided by its distributors.
N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
Power Field-Effect Transistor, 66A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh DM2series, Vds=600 V, 66 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N-CH, 600V, 66A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 66A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -12.53%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)66 A
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)600 V
Input Capacitance5.508 nF
Max Operating Temperature150 °C
Max Power Dissipation446 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max42 mΩ
Schedule B8541210080
Threshold Voltage4 V