Infineon SPD18P06PGBTMA1

Name: Infineon SPD18P06PGBTMA1
Brand: Infineon
SKU: SPD18P06PGBTMA1

MOSFET, P-CH, 60V, 18.6A, TO-252; Transistor Polarity: P Channel; Continuous Drai

$ 0.531

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		SPD18P06PGBTMA1	4,812	1		1.730	1.100	0.734	0.548	0.548
Arrow Electronics	3	SPD18P06PGBTMA1	8,831	1		1.507	1.008	0.694	0.527	0.527
DigiKey	2	SPD18P06PGBTMA1CT-ND	294	1	Cut Tape	1.680	1.066	0.714	0.714	0.714
Rochester Electronics		SPD18P06PGBTMA1	20,573								18h
Avnet		SPD18P06PGBTMA1	0	2500							4d

Inventory History

3 month trend: -12.61%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPD18P06PGBTMA1.

IHS

Datasheet10 pages26 years ago

Arrow Electronics

Inventory History

3 month trend:

-12.61%

CAD Models

Download Infineon SPD18P06PGBTMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-02-19

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

Related Parts

onsemiNTD20N03L27G

Tube Surface Mount N-Channel Single Mosfet Transistor 20A Ta 20A 74W 31ns

Details

STMicroelectronicsSTD15NF10T4

N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Details

onsemiFDD6630A

N-Channel PowerTrench® MOSFET, 30V, 21A, 35mΩ

Details

onsemiFDD8447L-F085

PowerTrench® MOSFET, N-Channel, 40V, 50A, 11.0mΩ

Details

onsemiHUF75309D3S

19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA

Details

STMicroelectronicsSTD20NF06LT4

Trans MOSFET N-CH 60V 24A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 24A DPAK

Details

Descriptions

Descriptions of Infineon SPD18P06PGBTMA1 provided by its distributors.

MOSFET, P-CH, 60V, 18.6A, TO-252; Transistor Polarity:P Channel; Continuous Drai

Newark

Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Power Mosfet - DPAK

Future Electronics

Power MOSFET, P Channel, 60 V, 18.6 A, 0.1 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB

ComSIT Distribution GmbH

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon

MOSFET, P-CH, 60V, 18.6A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Farnell