Infineon SPA11N80C3XKSA1

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube

800V 11A 34W 450m´Î@10V7.1A 3.9V@680Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, COOLMOS, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:800V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:11A; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:41W; Power Dissipation Pd:41W; Power Dissipation Ptot Max:41W; Pulse Current Idm:33A; Termination Type:Through Hole; Voltage Vds:800V; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V

800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar