Infineon IRLML6302PBF

Name: Infineon IRLML6302PBF
Brand: Infineon
SKU: IRLML6302PBF

Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Worldway Electronics		IRLML6302PBF	15,870	7		0.038	0.037	0.035	0.035	7h
Classic Components	2	IRLML6302PBF	80,000							3d
Aztech		IRLML6302PBF	573		17.160	17.160	17.160	17.160	17.160	3h
Abacus Technologies		IRLML6302PBF	0							2d
Chip 1 Exchange		IRLML6302PBF	Contact							1d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML6302PBF.

Newark

Datasheet9 pages12 years ago

IHS

TME

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Alternate Parts

This Part

Alternate Parts

InfineonIRLML6302PBF

InfineonIRLML6302GTRPBF

Price @ 1000

$ 0.099

Stock

97,463

238,714

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-3

TO-236-3

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

780 mA

Threshold Voltage

-1.5 V

Rds On Max

600 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

540 mW

Input Capacitance

97 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2004-01-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-07-31

LTD Date2025-01-31

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Descriptions

Descriptions of Infineon IRLML6302PBF provided by its distributors.

Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW

Distrelec

Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

SHENGYU ELECTRONICS

MOSFET, P, LOGIC, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Current Temperature:25°C; Device Marking:IRLML6302; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:400mW; Power Dissipation Pd:400mW; Pulse Current Idm:34A; SMD Marking:1C; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-12V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.4V

element14 APAC