onsemi FDV303N

Name: onsemi FDV303N
Brand: onsemi
SKU: FDV303N

Transistor, Digital Fet, N-channel, Mosfet, 25V, 0.68A, 0.35W, SOT-23

$ 0.074

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics	3	FDV303N	11,346,000	3K	Tape & Reel					0.025
Avnet	2	FDV303N	648,000	3K						0.027	3d
Newark	2	FDV303N	58,291	1	Cut Tape	0.037	0.037	0.037	0.037	0.037
Verical	5	FDV303N	12,299	8523						0.039
Arrow Electronics	3	FDV303N	13,260	1		0.283	0.183	0.116	0.074	0.064

Inventory History

3 month trend: -1.70%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDV303N.

IHS

Datasheet8 pages6 years ago

Datasheet0 pages0 years ago

Master Electronics

Upverter

onsemi

TME

Inventory History

3 month trend:

-1.70%

CAD Models

Download onsemi FDV303N symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	SymbolFootprint	3D	Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiFDV304P

Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P

Details

onsemiFDV302P

Transistor MOSFET P-Channel 25V 125mA 350mW Surface Mount SOT-23

Details

onsemiFDV301N

Transistor MOSFET N-Ch. 25V 220mA 0,35W 4Ohm SOT23 FDV301N

Details

Diodes Inc.DMN2300U-7

N-Channel 20 V 80 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

Details

Diodes Inc.DMG2305UX-7

P-Channel 20 V 52 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

Details

Diodes Inc.DMG2305UX-13

P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3

Details

Descriptions

Descriptions of onsemi FDV303N provided by its distributors.

TRANSISTOR, DIGITAL FET, N-CHANNEL, MOSFET, 25V, 0.68A, 0.35W, SOT-23

RS (Formerly Allied Electronics)

DIGITAL FET, N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

Distrelec

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Fairchild Semiconductor