Infineon IRLH5030TRPBF

Name: Infineon IRLH5030TRPBF
Brand: Infineon
SKU: IRLH5030TRPBF

INFINEON IRLH5030TRPBF MOSFET Transistor, N Channel, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V

$ 1.15

NRND

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark		IRLH5030TRPBF	2,191	1	Cut Tape	3.130	2.030	1.400	1.170	1.170
Future Electronics	2	IRLH5030TRPBF	48,000	4K	Tape & Reel					0.955
Rochester Electronics	2	IRLH5030TRPBF	39,183					1.270	1.050	0.940	2h
Arrow Electronics	2	IRLH5030TRPBF	3,970	1		2.754	1.851	1.366	1.078	1.078
DigiKey	3	IRLH5030TRPBFCT-ND	5,317	1	Cut Tape	3.800	2.463	1.703	1.274	1.187

Inventory History

3 month trend: -1.22%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLH5030TRPBF.

IHS

Datasheet10 pages11 years ago

Datasheet9 pages11 years ago

Newark

Farnell

Inventory History

3 month trend:

-1.22%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLH5030TRPBF

InfineonIRLH5030TR2PBF

Price @ 1000

$ 1.15

$ 1.764

Stock

521,455

45,592

Authorized Distributors

Mount

Surface Mount

Case/Package

QFN

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

13 A

Threshold Voltage

2.5 V

Rds On Max

9 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

3.6 W

Input Capacitance

5.185 nF

Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-08

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLH5030TRPBF provided by its distributors.

INFINEON IRLH5030TRPBF MOSFET Transistor, N Channel, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V

Fly-Wing Technology

Single N-Channel 100 V 9.9 mOhm 44 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Future Electronics

MOSFET, N-Channel, 100V, 100A, 9.0 mOhm max, 44 nC Qg, PQFN, Logic Level

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

Infineon SCT

Power MOSFET, N Channel, 100 V, 100 A, 0.009 ohm, QFN, Surface Mount

Avnet

Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R

Verical

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes

Newark

MOSFET,N CH,100V,100A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:3.6W; Voltage Vgs Max:16V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 88 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9.9 / Gate-Source Voltage V = 16 / Fall Time ns = 41 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.6

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