Infineon IRLB4030PBF

Name: Infineon IRLB4030PBF
Brand: Infineon
SKU: IRLB4030PBF

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

$ 1.35

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Distributor		SKU		Min	Pkg
Newark		IRLB4030PBF	825	1		3.920	1.930	1.770	1.510	1.510
Arrow Electronics	2	IRLB4030PBF	4,210	1		4.939	3.240	2.272	1.726	1.614
Future Electronics	2	IRLB4030PBF	250	50	Tube			1.390	1.350	1.320
Rochester Electronics		IRLB4030PBF	658					1.280	1.150	1.080	23h
DigiKey		448-IRLB4030PBF-ND	2,944	1	Tube	4.110	2.696	1.891	1.436	1.283

Inventory History

3 month trend: -33.97%

CAD Models

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Datasheets & Documents

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Datasheet9 pages17 years ago

Datasheet8 pages17 years ago

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Inventory History

3 month trend:

-33.97%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-03-23

Lifecycle StatusProduction (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRLB4030PBF provided by its distributors.

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 100 V 4.5 mOhm 87 nC 3HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET, 100V, 180A, 4.3 MOHM, 87 NC QG,TO220

RS (Formerly Allied Electronics)

HEXFET Power MOSFET Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:180A; On Resistance, Rds(on):3.4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N-CH 100V 180A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Package / Case:TO-220AB; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

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