Infineon IRFB4110PBF

Name: Infineon IRFB4110PBF
Brand: Infineon
SKU: IRFB4110PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W

$ 1.1

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Future Electronics	2	IRFB4110PBF	14	50	Tube			1.070	1.040	1.010
Arrow Electronics		IRFB4110PBF	1,625	1		1.413	1.413	1.355	1.355	1.355
Rutronik		TMOSP12115	2,200	50				1.007	0.806	0.806	16h
Newark		IRFB4110PBF	0	1		2.990	1.580	1.420	1.160	1.160
Rochester Electronics		IRFB4110PBF	0					1.330	1.100	0.984	9h

Inventory History

3 month trend: -23.23%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4110PBF.

Official Datasheet4 years ago

Inventory History

3 month trend:

-23.23%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFB4110PBF

InfineonIRFB4110GPBF

Price @ 1000

$ 1.1

$ 2.07

Stock

1,156,942

138,325

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

370 W

Input Capacitance

9.62 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-04-26

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRFB4110PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W

Distrelec

Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4110PBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon