Infineon IRFB4310PBF

Name: Infineon IRFB4310PBF
Brand: Infineon
SKU: IRFB4310PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 5.6 Milliohms; ID 130A; TO-220AB; PD 300W

$ 1.483

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Rochester Electronics

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3 month trend: -21.08%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4310PBF.

IHS

Datasheet12 pages20 years ago

Datasheet13 pages20 years ago

Datasheet12 pages20 years ago

RS (Formerly Allied Electronics)

iiiC

DigiKey

Inventory History

3 month trend:

-21.08%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-06-29

Lifecycle StatusProduction (Last Updated: 3 months ago)

LTB Date2014-01-09

LTD Date2014-07-09

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Descriptions

Descriptions of Infineon IRFB4310PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W

RS (Formerly Allied Electronics)

MOSFET N-CH 100V 130A TO220AB N-Channel 100 V 130A (Tc) 300W (Tc) Through Hole TO-220AB

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Infineon Technologies N channel HEXFET power MOSFET, 100 V, 130 A, TO-220, IRFB4310PBF

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Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3

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100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

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Infineon HEXFET N-Ch MOSFET Vds=100V 130A TO-220AB TH 3-Pin

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N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB4310PBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon