Infineon IRGB4715DPBF

Name: Infineon IRGB4715DPBF
Brand: Infineon
SKU: IRGB4715DPBF

Trans IGBT Chip N-CH 650V 21A 100W 3-Pin(3+Tab) TO-220AB Tube

$ 1.18

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRGB4715DPBF	3,199					1.420	1.180	1.050	6h
Component Stockers USA		IRGB4715DPBF	442			1.190	1.190	1.110	1.010	1.010	>1wk
Worldway Electronics		IRGB4715DPBF	19,376	7	Tube		1.251	1.227	1.180	1.156	6h
Esaler Electronic		IRGB4715DPBF	169			1.780	1.763	1.746	1.729	1.712	21h
Fmall Co., Limited		IRGB4715DPBF	13,550			0.900	0.900	0.842	0.794	0.726	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRGB4715DPBF.

IHS

Datasheet12 pages11 years ago

Inventory History

3 month trend:

+0.00%

Powered by

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-07-01

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2017-03-16

LTD Date2017-09-16

Related Parts

InfineonIRGB4610DPBF

IGBT WITH RECOVERY DIODE / IGBT 600 V 16 A 77 W Through Hole TO-220AB

Details

InfineonIRGB4056DPBF

600 V, 12 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS

Details

InfineonIRGB10B60KDPBF

IRGB10B60 Series 600 V 22 A 156 W Insulated Gate Bipolar Transistor - TO-220AB

Details

onsemiHGTP12N60C3D

Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail

Details

onsemiHGTP3N60A4

Trans IGBT Chip N-CH 600V 17A 70000mW 3-Pin(3+Tab) TO-220AB Rail

Details

Descriptions

Descriptions of Infineon IRGB4715DPBF provided by its distributors.

Trans IGBT Chip N-CH 650V 21A 100W 3-Pin(3+Tab) TO-220AB Tube

Verical

IGBT, SINGLE, 650V, 21A, TO-220AB-3

element14 APAC

Insulated Gate Bipolar Transistor

IHS

Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant

Infineon

IGBT, SINGLE, 650V, 21A, TO-220AB-3; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220AB; No. of

Farnell