Infineon IRFU3607PBF

Name: Infineon IRFU3607PBF
Brand: Infineon
SKU: IRFU3607PBF

MOSFET, N Ch., 75V, 80A, 9.0 MOHM, 51 NC QG, I-PAK, Pb-Free

$ 0.726

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Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet		IRFU3607PBF	290	75				0.580	0.571	0.534	4d
Newark	2	IRFU3607PBF	10,313	1		2.310	0.990	0.889	0.752	0.752
Future Electronics	2	IRFU3607PBF	75	675	Tube				0.870	0.840
Arrow Electronics	2	IRFU3607PBF	12,759	1		1.495	0.855	0.788	0.620	0.620
Rochester Electronics		IRFU3607PBF	95					0.867	0.720	0.642	8h

Inventory History

3 month trend: -28.20%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFU3607PBF.

IHS

Datasheet10 pages16 years ago

Datasheet11 pages16 years ago

Newark

element14 APAC

Inventory History

3 month trend:

-28.20%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFU3607PBF provided by its distributors.

MOSFET, N Ch., 75V, 80A, 9.0 MOHM, 51 NC QG, I-PAK, Pb-Free

RS (Formerly Allied Electronics)

Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-251AA

Future Electronics

Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 75V 56A I-PAK

Win Source

75V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Semicontronic

MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon