Infineon IRFU2405PBF

Name: Infineon IRFU2405PBF
Brand: Infineon
SKU: IRFU2405PBF

Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 1.105

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFU2405PBF	4,421					0.760	0.631	0.562	5h
RS (Formerly Allied Electronics)		IRFU2405PBF	0	10	Bulk		1.760	1.580	1.580	1.580	6h
Farnell		IRFU2405PBF	0	1		1.956*	1.956*	0.737*	0.482*	0.482*	5h
Win Source	2	WS-IRFU2405	1,350	345					0.139	0.112	6h
Worldway Electronics		IRFU2405PBF	9,476	7	Tube		0.190	0.185	0.175	0.175	5h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFU2405PBF.

Farnell

Datasheet11 pages21 years ago

IHS

Newark

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

InfineonIRFU2405PBF

Price @ 1000

$ 1.105

Stock

224,411

Authorized Distributors

Mount

Through Hole

Case/Package

TO-251-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

30 A

Threshold Voltage

Rds On Max

16 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

110 W

Input Capacitance

2.43 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-03-02

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-06-01

LTD Date2012-09-01

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Descriptions

Descriptions of Infineon IRFU2405PBF provided by its distributors.

Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

Single N-Channel 55 V 16 mOhm 110 nC HEXFET® Power Mosfet - IPAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 56 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 16 / Gate-Source Voltage V = 20 / Fall Time ns = 78 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

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