Infineon IRFR5505TRPBF
$ 0.459
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR5505TRPBF | 50,000 | 2K | 4d | ||||||||
| Newark | IRFR5505TRPBF | 9,926 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFR5505TRPBF | 84,000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRFR5505TRPBF | 1,697 | 1 | |||||||||
| Rutronik | TMOSP12350 | 36,000 | 2K | 14h |
Inventory History
3 month trend: +49.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China, Malaysia, Mexico, Taiwan, USA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
InfineonIRFR5505PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonAUIRFR5505
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonIRFR5505GTRPBF
MOSFET, P-CHANNEL, -55V, -18A, 110 MOHM, 21.3 NC QG, D-PAK, HALOGEN-FREE
Descriptions
Descriptions of Infineon IRFR5505TRPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252-3
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
P CHANNEL MOSFET, -55V, 18A, D-PAK; TRAN; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A;
Power MOSFET, P Channel, 55 V, 18 A, 0.11 ohm, TO-252AA, Surface Mount
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-18A; On Resistance, Rds(on):110mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak; Power Dissipation, Pd:57W ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 110 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 57
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +49.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)18 A
Current Rating-18 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance110 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation57 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements