Infineon IRFR5505PBF
Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.11 Ohm; Id -18A; D-pak (TO-252AA); Pd 57W
$ 0.84
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-04
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Related Parts
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45W(Tc) 4V@ 250µA 20nC@ 20V 1individualNChannel 55V 90mΩ@ 15A,10V 250pF@25V TO-252AA SMD mount
Descriptions
Descriptions of Infineon IRFR5505PBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
Transistor MOSFET P Channel 55 Volt 18 Amp 3 Pin 2+ Tab Dpak
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252AA
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -55V, -18A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; SMD Marking:IRFR5505; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)18 A
Current Rating-18 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance110 mΩ
Package Quantity3000
Power Dissipation57 W
Rds On Max110 mΩ
Recovery Time77 ns
Resistance110 mΩ
Rise Time28 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements