Infineon IRFR4105TRPBF

Name: Infineon IRFR4105TRPBF
Brand: Infineon
SKU: IRFR4105TRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.045 Ohm; Id 27A; D-pak (TO-252AA); Pd 68W

$ 0.561

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Distributor		SKU		Min	Pkg
Newark		IRFR4105TRPBF	871	1	Cut Tape	1.770	1.160	0.801	0.601	0.601
Future Electronics	2	IRFR4105TRPBF	12,000	2K	Tape & Reel					0.370
DigiKey	3	IRFR4105PBFCT-ND	8,480	1	Cut Tape	2.010	1.270	0.848	0.608	0.608
Arrow Electronics	2	IRFR4105TRPBF	656	1		1.463	0.972	0.695	0.558	0.558
Avnet		IRFR4105TRPBF	0	2K						0.334	12h

Inventory History

3 month trend: -18.39%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR4105TRPBF.

Newark

Datasheet12 pages21 years ago

IHS

RS (Formerly Allied Electronics)

iiiC

DigiKey

Inventory History

3 month trend:

-18.39%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IRFR4105TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.045 Ohm 22.7 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH, 55V, 27A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon