Infineon IRLR2705TRPBF

Name: Infineon IRLR2705TRPBF
Brand: Infineon
SKU: IRLR2705TRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 28A; D-pak (TO-252AA); Pd 68W; -55DE

$ 0.321

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Price and Stock

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Distributor		SKU		Min	Pkg
Future Electronics	2	IRLR2705TRPBF	6,000	2K	Tape & Reel					0.245
Rochester Electronics		IRLR2705TRPBF	2					0.313	0.260	0.232	12h
Arrow Electronics	2	IRLR2705TRPBF	1,500	1		0.807	0.574	0.409	0.302	0.302
DigiKey	3	IRLR2705PBFCT-ND	21,088	1	Cut Tape	1.380	0.865	0.567	0.398	0.398
Newark		IRLR2705TRPBF	0	2K	Tape & Reel					0.322

Inventory History

3 month trend: +15.42%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR2705TRPBF.

IHS

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

DigiKey

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

+15.42%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLR2705TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de

RS (Formerly Allied Electronics)

Transistor: N-MOSFET; unipolar; 55V; 28A; 0.04ohm; 68W; -55+175 deg.C; SMD; TO252AA(DPAK)

Maritex

Single N-Channel 55 V 40 mOhm 25 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 55 V, 28 A, 0.04 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon