Infineon IRFR3806TRPBF

Name: Infineon IRFR3806TRPBF
Brand: Infineon
SKU: IRFR3806TRPBF

Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA

$ 0.571

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	IRFR3806TRPBF	3,969	5	Cut Tape		1.220	0.853	0.777	0.777
Future Electronics	2	IRFR3806TRPBF	4,000	2K	Tape & Reel					0.375
Arrow Electronics	3	IRFR3806TRPBF	14,899	1		1.361	0.955	0.663	0.489	0.390
DigiKey	3	IRFR3806TRPBFCT-ND	22,574	1	Cut Tape	2.020	1.282	0.856	0.615	0.615
Avnet		IRFR3806TRPBF	0	6K						0.348	1d

Inventory History

3 month trend: +79.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR3806TRPBF.

Newark

Datasheet10 pages18 years ago

Datasheet11 pages18 years ago

iiiC

Inventory History

3 month trend:

+79.28%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFR3806TRPBF

InfineonAUIRFR3806TRL

Price @ 1000

$ 0.571

$ 2.5

Stock

1,646,211

406,662

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

43 A

Threshold Voltage

Rds On Max

15.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

71 W

Input Capacitance

1.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-04

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRFR3806TRPBF provided by its distributors.

Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:71W; No. of Pins:3Pins RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon