Infineon IRFP4710PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 72A;TO-247AC;PD 190W;VGS +/-20V

Single N-Channel 100 V 0.014 Ohm 110 nC HEXFET® Power Mosfet - TO-247-3AC

MOSFET N-CH 100V 72A TO247AC N-Channel 100 V 72A (Tc) 190W (Tc) Through Hole TO-247AC

100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

190W(Tc) 20V 5.5V@ 250µA 170nC@ 10 V 1individualNChannel 100V 14mΩ@ 45A,10V 72A 6.16nF@25V TO-247AC Through hole mounting 24.99mm(height)

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 100V, 72A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Junction to Case Thermal Resistance A:0.81°C/W; On State resistance @ Vgs = 10V:14ohm; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V