Infineon IRFP4710PBF

Name: Infineon IRFP4710PBF
Brand: Infineon
SKU: IRFP4710PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.011 Ohm; Id 72A; TO-247AC; Pd 190W; Vgs +/-20V

$ 3.175

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFP4710PBF	39,842					1.500	1.340	1.260	21h
RS (Formerly Allied Electronics)		IRFP4710PBF	0	5	Bulk		5.690	5.010	5.010	5.010	12h
Farnell		IRFP4710PBF	0	1		5.319*	4.782*	3.922*	3.331*	3.331*	21h
Verical	2	IRFP4710PBF	22,467	200					1.675	1.575
Win Source	2	WS-IRFP4710	249	10			5.455	3.636	3.636	3.636	22h

Inventory History

3 month trend: -1.40%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4710PBF.

Farnell

Datasheet9 pages22 years ago

IHS

RS (Formerly Allied Electronics)

iiiC

DigiKey

Inventory History

3 month trend:

-1.40%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-01-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

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Descriptions

Descriptions of Infineon IRFP4710PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 72A;TO-247AC;PD 190W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 100 V 0.014 Ohm 110 nC HEXFET® Power Mosfet - TO-247-3AC

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100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

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Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET, N, 100V, 72A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Junction to Case Thermal Resistance A:0.81°C/W; On State resistance @ Vgs = 10V:14ohm; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon