Infineon IRFP2907ZPBF

Name: Infineon IRFP2907ZPBF
Brand: Infineon
SKU: IRFP2907ZPBF

MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 310 W

$ 3.53

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFP2907ZPBF	2,000					2.070	1.850	1.740	1h
RS (Formerly Allied Electronics)		IRFP2907ZPBF	0	2	Bulk		5.440	5.210	5.210	5.210	2h
Farnell		IRFP2907ZPBF	0	1		5.420*	4.363*	3.051*	2.436*	2.436*	1h
Verical		IRFP2907ZPBF	2,000	145					2.313	2.175
Win Source	2	WS-IRFP2907Z	2,948	6			8.357	5.571	5.571	5.571	2h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP2907ZPBF.

Farnell

Datasheet10 pages15 years ago

Newark

IHS

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFP2907ZPBF

InfineonAUIRFP2907Z

Price @ 1000

$ 3.53

$ 3.79

Stock

153,893

26,814

Authorized Distributors

Mount

Through Hole

Case/Package

TO-247-3

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

90 A

170 A

Threshold Voltage

4 V

2 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

310 W

Input Capacitance

7.5 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-06-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-03-31

LTD Date2023-09-30

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Descriptions

Descriptions of Infineon IRFP2907ZPBF provided by its distributors.

MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 310 W

Distrelec

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Single N-Channel 75 V 4.5 mOhm 180 nC HEXFET® Power Mosfet - TO-247-3AC

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 170A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

MOSFET, N, 75V, 170A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Device Marking:IRFP2907Z; On State resistance @ Vgs = 10V:4.5ohm; Package / Case:TO-247AC; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC