Infineon IRFH5210TRPBF

Name: Infineon IRFH5210TRPBF
Brand: Infineon
SKU: IRFH5210TRPBF

INFINEON IRFH5210TRPBF MOSFET Transistor, N Channel, 55 A, 100 V, 0.0126 ohm, 10 V, 4 VNew

$ 0.593

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Distributor		SKU		Min	Pkg
Newark		IRFH5210TRPBF	900	1	Cut Tape	0.303	0.303	0.303	0.303	0.303
Rochester Electronics		IRFH5210TRPBF	7,322					0.648	0.538	0.480	1d
Arrow Electronics	2	IRFH5210TRPBF	11,900	1		1.634	1.130	0.784	0.593	0.500
DigiKey	2	IRFH5210TRPBFCT-ND	42	1	Cut Tape	2.330	1.485	0.999	0.724	0.668
Future Electronics	2	IRFH5210TRPBF	0	4K	Tape & Reel					0.910

Inventory History

3 month trend: +14.53%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet10 pages11 years ago

Newark

Inventory History

3 month trend:

+14.53%

CAD Models

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-04-12

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IRFH5210TRPBF provided by its distributors.

INFINEON IRFH5210TRPBF MOSFET Transistor, N Channel, 55 A, 100 V, 0.0126 ohm, 10 V, 4 VNew

Fly-Wing Technology

Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

Infineon SCT

MOSFET N-CH 100V 10A 8-PQFN / Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R

Win Source

Power MOSFET, N Channel, 100 V, 55 A, 0.0149 ohm, PQFN, Surface Mount

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 3.6 W

Distrelec

MOSFET, N-CH, 100V, 55A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0126ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon