Infineon IRFH5110TRPBF
$ 0.797
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFH5110TRPBF | 716 | 2h | |||||||||
| Arrow Electronics | IRFH5110TRPBF | 489 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRFH5110TRPBF | 0 | 4K | Bulk | 15h | |||||||
| Farnell | IRFH5110TRPBF | 12 | 1 | Cut Tape | 2h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRFH5110TRPBF | 22,300 | 1 | Tape & Reel | 1d |
Inventory History
3 month trend: -0.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFH5110TRPBF.
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint |
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.797
$ 1.59
Stock
412,425
242,600
Authorized Distributors
4
3
Mount
Surface Mount
Surface Mount
Case/Package
QFN
QFN
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
4 V
4 V
Rds On Max
12.4 mΩ
12.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.6 W
114 W
Input Capacitance
3.152 nF
3.152 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Related Parts
InfineonIRFH7110TRPBF
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
InfineonIRFH7107TRPBF
75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH5206TRPBF
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Descriptions
Descriptions of Infineon IRFH5110TRPBF provided by its distributors.
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
Infineon SCT
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Available until stocks are exhausted Alternative available
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -0.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance12.4 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time6.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.152 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance12.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max12.4 mΩ
Resistance12.4 MΩ
Rise Time9.6 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time7.8 ns
Dimensions
Height900 µm
Length5.9944 mm
Width5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFH5110TRPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements