Infineon IRFB4110GPBF
$ 2.07
Obsolete
Inventory History
3 month trend: +75.41%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.07
$ 1.1
Stock
138,325
1,157,203
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
4 V
Rds On Max
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
370 W
370 W
Input Capacitance
9.62 nF
9.62 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-01-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Related Parts
InfineonIRFB3077PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de
InfineonIRFB4310PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
Descriptions
Descriptions of Infineon IRFB4110GPBF provided by its distributors.
100V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
Single N-Channel 100 V 4.5 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, 100V, 180A, 4.5 MOHM, 150 NC QG, TO-220AB, HALOGEN-FREE
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0045Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +75.41%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time88 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.62 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity1000
Power Dissipation370 W
Rds On Max4.5 mΩ
Rise Time67 ns
Threshold Voltage4 V
Turn-Off Delay Time78 ns
Turn-On Delay Time25 ns
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements