Infineon IRF7809AVPBF

Name: Infineon IRF7809AVPBF
Brand: Infineon
SKU: IRF7809AVPBF

IRF7809AVPBF: 30 V 13.3 A 9 mOhm SMT Hexfet Power Mosfet - SOIC-8

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7809AVPBF	0	3800	Bulk					1.730	22h
Farnell	IRF7809AVPBF	0	1		1.426*	1.426*	0.917*	0.596*	0.596*	9h
Worldway Electronics	IRF7809AVPBF	29,316	7			0.145	0.143	0.137	0.134	1d
Anlinkda	IRF7809AVPBF	54,312			0.161	0.144	0.124	0.124	0.113	1d
Antdic Electronics	IRF7809AVPBF	24,760			11.000	10.450	9.900	8.800	8.250	5d

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7809AVPBF.

Future Electronics

Datasheet8 pages20 years ago

IHS

RS (Formerly Allied Electronics)

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-11-02

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF7809AVPBF provided by its distributors.

IRF7809AVPBF: 30 V 13.3 A 9 mOhm SMT Hexfet Power Mosfet - SOIC-8

Future Electronics

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.3A;SO-8;PD 2.5W;VGS +/-12V

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13.3A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:F7809; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

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