Infineon IRF7769L1TRPBF

Name: Infineon IRF7769L1TRPBF
Brand: Infineon
SKU: IRF7769L1TRPBF

Single N-Channel 100 V 3.5 mOhm 200 nC HEXFET® Power Mosfet - DirectFET®

$ 2.315

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Distributor		SKU		Min	Pkg
Avnet	2	13AC9205	835	1		5.410	3.550	2.580	2.470	2.470	4d
Newark	2	IRF7769L1TRPBF	835	1	Cut Tape	5.570	3.640	3.310	3.310	3.310
Future Electronics	2	IRF7769L1TRPBF	4,000	4K	Tape & Reel					3.010
Arrow Electronics	2	IRF7769L1TRPBF	2,230	1		4.966	3.413	2.516	2.286	2.286
Rochester Electronics	2	IRF7769L1TRPBF	33,037					1.950	1.740	1.640	10h

Inventory History

3 month trend: -17.30%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7769L1TRPBF.

IHS

Datasheet11 pages9 years ago

TME

Newark

Inventory History

3 month trend:

-17.30%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2013-02-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7769L1TRPBF provided by its distributors.

Single N-Channel 100 V 3.5 mOhm 200 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

MOSFET Devices; INFINEON; IRF7769L1TRPBF; 100 V; 88 A; 20 V; 3.3 W

Maritex

Trans MOSFET N-CH 100V 124A 15-Pin Direct-FET L8 T/R

Avnet Japan

MOSFET N-CH 100V 20A DIRECTFET / Ideal for High Performance Isolated Converter Primary Switch Socket

Win Source

A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 20 amperes, MG-WDSON-11, RoHS

Infineon SCT

MOSFET, N-CH, 100V, 375A, DIRECTFET L8;

Farnell

XSTR MOSFET N-CH 100V 20A 3.5MOHM@1

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Power Field-Effect Transistor, 375A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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MOSFET 100V N-CH 142A 3.5 mOhm 200nC

Digi-ic_SMART PIONEER

Infineon NMOS, Vds=100 V, 124 A, FET

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IRF7769 - 12V-300V N-CHANNEL POW

ODG (Origin Data Global)

MOSFET, N-CH, 100V, 375A, DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:375A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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