Infineon IPB027N10N3GATMA1

Name: Infineon IPB027N10N3GATMA1
Brand: Infineon
SKU: IPB027N10N3GATMA1

Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount

$ 2.126

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Distributor		SKU		Min	Pkg
Newark	2	IPB027N10N3GATMA1	1,685	1	Cut Tape	5.420	3.730	3.400	3.400	3.400
Arrow Electronics	3	IPB027N10N3GATMA1	1,616	1		2.436	2.436	2.436	2.436	2.436
Rutronik		TMOSP9472	21,000	1K					2.470	1.980	3h
Rochester Electronics		IPB027N10N3GATMA1	1,000					2.030	1.820	1.710	20h
DigiKey	3	IPB027N10N3GATMA1CT-ND	9,970	1	Cut Tape	5.760	3.837	2.747	2.474	2.474

Inventory History

3 month trend: -9.09%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet9 pages15 years ago

iiiC

Inventory History

3 month trend:

-9.09%

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Supply Chain

Country of OriginMalaysia, Mexico, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-02-17

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IPB027N10N3GATMA1 provided by its distributors.

Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

N-CHANNEL POWER TRANSISTOR FOR HIGH-FREQUENCY SWITCHING WITH 175 DEGREE CELSIUS

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

Infineon SCT

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:300W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IPB027N10N3GATMA1.

Newark

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon