Infineon IRF6648TRPBF

Name: Infineon IRF6648TRPBF
Brand: Infineon
SKU: IRF6648TRPBF

Single N-Channel 60 V 7 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®

$ 1.07

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		IRF6648TRPBF	4,800	4800						0.925	19h
Rochester Electronics	2	IRF6648TRPBF	32,924					1.190	0.988	0.881	16h
DigiKey	3	IRF6648TRPBFCT-ND	16,877	1	Cut Tape	3.620	2.344	1.617	1.206	0.978
Arrow Electronics	2	IRF6648TRPBF	3,468	1		2.478	1.788	1.302	1.021	1.007
Newark		IRF6648TRPBF	0	1	Cut Tape	2.990	1.940	1.330	1.100	1.100

Inventory History

3 month trend: +7.53%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6648TRPBF.

IHS

Datasheet10 pages9 years ago

Datasheet10 pages19 years ago

Datasheet10 pages20 years ago

iiiC

DigiKey

Newark

Inventory History

3 month trend:

+7.53%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF6648TRPBF

InfineonIRF6648TR1PBF

Price @ 1000

$ 1.07

$ 3.74

Stock

808,461

549,121

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

86 A

Threshold Voltage

4 V

Rds On Max

7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.8 W

89 W

Input Capacitance

2.12 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-08-30

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRF6648TRPBF provided by its distributors.

Single N-Channel 60 V 7 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

Power MOSFET, N Channel, 60 V, 86 A, 0.0055 ohm, DirectFET MN, Surface Mount

EBV Elektronik

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:69A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MN ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon