Infineon IRF3205ZSPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.9 Milliohms; ID 75A; D2Pak; PD 170W; VGS +/-20
$ 4.2
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3205ZSPBF.

IHS

Datasheet13 pages16 years ago
Datasheet12 pages16 years ago

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

CAD Models

Download Infineon IRF3205ZSPBF symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
SnapEDA
Footprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

Price @ 1000
$ 4.2
$ 0.89
$ 0.89
Stock
13,525
1,094,774
1,094,774
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vds)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
4 V
-
-
Rds On Max
6.5 mΩ
6.5 mΩ
6.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
170 W
170 W
170 W
Input Capacitance
3.45 nF
3.45 nF
3.45 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-25
Lifecycle StatusProduction (Last Updated: 1 month ago)
LTB Date2014-10-25
LTD Date2015-04-25

Related Parts

InfineonIRF1010NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
STMicroelectronicsSTB80NF55-06T4
STMicroelectronics N-Channel MOSFET, Vds=55V, 80A, D2PAK (TO-263), SMD, 3-Pin
InfineonIRF1405ZSPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTB85NF55T4
STB85NF55T4 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin D2PAK
STMicroelectronicsSTB80NF55-08T4
N-channel 55 V, 0.0065 Ohm typ., 80 A STripFET Power MOSFET in a D2PAK package
InfineonIRF1010ESPBF
Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

Descriptions

Descriptions of Infineon IRF3205ZSPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9 Milliohms;ID 75A;D2Pak;PD 170W;VGS +/-20
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 170 W
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 55V, 110A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:6.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:440A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA