Infineon IRF1010ESPBF

Name: Infineon IRF1010ESPBF
Brand: Infineon
SKU: IRF1010ESPBF

Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

$ 3.75

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1010ESPBF	0	500	Bulk				3.750	3.490	17h
Farnell	IRF1010ESPBF	0	1		3.814*	3.814*	1.907*	0.845*	0.845*	1d
Win Source	WS-IRF1010ESPBF	8,100	40				1.228	0.998	0.998	2h
Worldway Electronics	IRF1010ESPBF	19,690	7			0.201	0.195	0.185	0.185	1d
Run Hong Electronics	IRF1010ESPBF	7,326			4.216	4.216	4.216	4.216	4.216	12h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1010ESPBF.

IHS

Datasheet11 pages21 years ago

element14 APAC

DigiKey

Newark

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF1010ESPBF provided by its distributors.

Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC