STMicroelectronics STB80NF55-06T4
$ 1.127
Production
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Min
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Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB80NF55-06T4.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
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STB85NF55T4 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin D2PAK
InfineonIRL2505STRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;D2Pak;PD 200W;VGS +/-16V
Descriptions
Descriptions of STMicroelectronics STB80NF55-06T4 provided by its distributors.
Power MOSFET, N Channel, 55 V, 40 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
Mosfet, N Channel, 55V, 80A, D2Pak; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STB80NF55-06T4
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.4 nF
Max Operating Temperature175 °C
Max Power Dissipation210 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation300 W
Rds On Max6.5 mΩ
Resistance6.5 mΩ
Rise Time155 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time125 ns
Turn-On Delay Time27 ns
Voltage Rating (DC)55 V
Dimensions
Height9.35 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB80NF55-06T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant