Infineon IRF1010NSPBF

Name: Infineon IRF1010NSPBF
Brand: Infineon
SKU: IRF1010NSPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; D2Pak; PD 180W; VGS +/-20V

$ 1.76

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1010NSPBF	0	1	Bulk	2.000	1.760	1.760	1.760	1.760	9h
Win Source	WS-IRF1010NSPBF	7,936	35				1.234	1.003	1.003	22h
Worldway Electronics	IRF1010NSPBF	17,450	7	Tube		1.866	1.830	1.760	1.725	20h
ZTZ Technology Limited	IRF1010NSPBF	23,052			0.919	0.845	0.772	0.625	0.625	3d
Anlinkda	IRF1010NSPBF	22,472			1.300	1.164	0.989	0.968	0.937	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet11 pages22 years ago

Farnell

Newark

RS (Formerly Allied Electronics)

iiiC

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF1010NSPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V

RS (Formerly Allied Electronics)

In a Tube of 50, IRF1010NSPBF N-Channel MOSFET, 85 A, 55 V HEXFET, 3-Pin D2PAK Infineon

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Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK

Avnet

Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon