Infineon IRF2804SPBF

Name: Infineon IRF2804SPBF
Brand: Infineon
SKU: IRF2804SPBF

Single N-Channel 40 V 2 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

$ 4.79

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF2804SPBF	0	1	Bulk	5.440	4.790	4.790	4.790	4.790	2h
Farnell	IRF2804SPBF	0	1		3.565*	2.677*	2.341*	1.668*	1.668*	12h
Win Source	WS-IRF2804SPBF	10,360	45				1.105	0.918	0.918	13h
Worldway Electronics	IRF2804SPBF	13,809	7	Tube		0.624	0.612	0.588	0.577	1d
Fly-Wing Technology	IRF2804SPBF	60,260			2.014	1.653	1.601	1.498	1.498	2d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF2804SPBF.

IHS

Datasheet12 pages16 years ago

Farnell

Newark

iiiC

RS (Formerly Allied Electronics)

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-10-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF2804SPBF provided by its distributors.

Single N-Channel 40 V 2 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.5Milliohms;ID 75A;D2Pak;PD 330W;VGS +/-20

RS (Formerly Allied Electronics)

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

MOSFET, N, 40V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300mW; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2804; Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:300mW; Pulse Current Idm:1080A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175oC junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.