Infineon IRF1010EZSPBF

Name: Infineon IRF1010EZSPBF
Brand: Infineon
SKU: IRF1010EZSPBF

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1010EZSPBF	0	3200	Bulk					1.540	10h
Win Source	WS-IRF1010EZSPBF	20	40				1.119	0.909	0.909	23h
Worldway Electronics	IRF1010EZSPBF	15,062	7	Tube		0.754	0.740	0.711	0.697	22h
SHENGYU ELECTRONICS	IRF1010EZSPBF	16,562	1		0.691	0.677	0.660	0.640	0.610	6d
Fly-Wing Technology	IRF1010EZSPBF	8,074			1.383	1.135	1.099	1.029	1.029	3d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1010EZSPBF.

IHS

Datasheet13 pages15 years ago

Datasheet12 pages15 years ago

Components Direct

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RS (Formerly Allied Electronics)

iiiC

Alternate Parts

This Part

Alternate Parts

InfineonIRF1010EZSPBF

InfineonAUIRF1010EZS

Price @ 1000

$ 1.22

Stock

41,319

62,414

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

8.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

2.81 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-09-08

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF1010EZSPBF provided by its distributors.

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:8.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:340A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

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