Infineon IPZ65R019C7XKSA1

Name: Infineon IPZ65R019C7XKSA1
Brand: Infineon
SKU: IPZ65R019C7XKSA1

N-Channel 600 V 75 A 466 W 19 mOhm Through Hole Mosfet - PG-TO247-4

$ 12.595

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Distributor	SKU		Min	Pkg
Newark	IPZ65R019C7XKSA1	280	1		21.570	18.740	18.740	18.740	18.740
Rochester Electronics	IPZ65R019C7XKSA1	6					11.710	10.480	9.860	1d
Arrow Electronics	IPZ65R019C7XKSA1	230	1		12.267	12.267	12.267	12.267	12.267
DigiKey	448-IPZ65R019C7XKSA1-ND	978	1	Tube	25.720	25.720	16.199	12.595	12.595
Avnet	IPZ65R019C7XKSA1	0	240					12.328	11.712	2h

Inventory History

3 month trend: -0.24%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet15 pages0 years ago

Inventory History

3 month trend:

-0.24%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-04-30

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPZ65R019C7XKSA1 provided by its distributors.

N-Channel 600 V 75 A 466 W 19 mOhm Through Hole Mosfet - PG-TO247-4

Future Electronics

Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Semicontronic

Mosfet, N-Ch, 650V, 75A, To-247-4; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.017Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPZ65R019C7XKSA1

Newark

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon