Infineon IPW60R160C6FKSA1

Name: Infineon IPW60R160C6FKSA1
Brand: Infineon
SKU: IPW60R160C6FKSA1

Power MOSFET, N Channel, 600 V, 23.8 A, 0.14 ohm, TO-247, Through Hole

$ 2.231

EOL

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Distributor	SKU		Min	Pkg
Avnet	IPW60R160C6FKSA1	189	30				2.187	1.964	1.964	6d
Newark	IPW60R160C6FKSA1	45	1		4.260	3.330	2.690	2.390	2.390
Arrow Electronics	IPW60R160C6FKSA1	120	1		4.676	2.686	2.231	2.231	2.231
Rochester Electronics	IPW60R160C6FKSA1	1,320					1.810	1.620	1.520	1d
DigiKey	IPW60R160C6FKSA1-ND	13	1	Tube	4.940	4.940	4.940	4.940	4.940

Inventory History

3 month trend: +233%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPW60R160C6FKSA1.

IHS

Datasheet18 pages8 years ago

Newark

Upverter

element14 APAC

_legacy Avnet

Inventory History

3 month trend:

+233%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-09-24

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IPW60R160C6FKSA1 provided by its distributors.

Power MOSFET, N Channel, 600 V, 23.8 A, 0.14 ohm, TO-247, Through Hole

EBV Elektronik

Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Semicontronic

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS

Infineon SCT

MOSFET,N CH,600V,23.8A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V

element14 APAC

Mosfet, N Channel, 650V, 23.8A, To-247-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:23.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPW60R160C6FKSA1.

Newark

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3

Infineon